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S T U405DH
S amHop Microelectronics C orp.
Nov,20 2007 ver1.0
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
40V
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-40V
ID
11A
R DS (ON) ( m )
Max
ID
- 9A
R DS (ON) ( m )
Max
33 @ V G S = 10V 45 @ V G S = 4.5V D1 D1/D2
45 @ V G S = -10V 65 @ V G S = -4.5V D2
S1
G1 S2 G2 TO-252-4L
G1 S1 N-ch
G2 S2 P -ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage 25 C Drain C urrent-C ontinuous @ Tc -P ulsed
a
S ymbol VDS VGS ID IDM IS Tc= 25 C PD Tc= 70 C
N-C hannel P-C hannel 40 20 11 9 45 7 11 7.7 -40 20 -9 -7 -36 -6
Unit V V A A A A
70 C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange
W C
TJ, TS TG
-55 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
13.6 120
C /W C /W
S T U405DH
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS
b
Condition
VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 8A VGS =4.5V, ID= 6A VDS = 5V, VGS = 4.5V VDS = 10V, ID= 8A
Min Typ C Max Unit
40 1 V uA 100 nA 1 1.5 24 30 20 13.8 580 3 33 45 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance
PF PF PF
VDS =25V, VGS = 0V f =1.0MHZ
82 50
SWITCHING CHAR ACTER ISTICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 20V ID = 1 A VGS = 10V R GE N = 3.3 ohm VDS =28V, ID =8A,VGS =10V VDS =28V, ID =8A,VGS =4.5V VDS =28V, ID = 8 A VGS =10V
2
11 10.2 17.3 20 11.3 5.8 1.2 2.9
ns ns ns ns nC nC nC nC
S T U405DH
P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS
b
Condition
VGS = 0V, ID = -250uA VDS = -32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID= -6A VGS =-4.5V, ID= -4A VDS = -5V, VGS = -10V VDS = -10V, ID = -6A
Min Typ C Max Unit
-40 -1 V uA 100 nA -1 -1.7 35 52 -20 12 980 135 90 -3 45 65 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance
PF PF PF
VDS =-25V, VGS = 0V f =1.0MHZ
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = -20V ID = -1A VGS = -10V R GE N = 3.3 ohm VDS =-28V, ID =-6A,VGS =-10V VDS =-28V, ID =-6A,VGS =-4.5V VDS =-28V, ID = -6 A VGS =-10V
3
12 17 82 35 20.7 11 1.5 6.2
ns ns ns ns nC nC nC nC
S T U405DH
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
VSD
Condition
VGS = 0V, Is =7A VGS = 0V, Is =-6A N-Ch P-Ch
Min Typ Max Unit
0.98 -0.9 1.2 -1.2
C
DRAIN-SOURCE DIODE CHARACTERISTICS b
V Notes a.Pulse Test:Pulse Width 300 s,Duty Cycle 2%. b.Guaranteed by design,not subject to production testing.
N-Channel
40
V G S =10V V G S =4.5V V G S =4V
20
32
16
ID, Drain C urrent(A)
V G S =3.5V
ID, Drain C urrent (A)
24
12
T j =125 C
-55 C 8 4 0
25 C
16
V G S =3V
8
V G S =2.5V
0
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
72 60 1.5
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
1.4 1.3 1.2 1.1 1.0 0.0
V G S =4.5V ID=6A
R DS (on) (m )
48 36 24 12 0
V G S =4.5V
V G S =10V
V G S =10V ID=8A
1
8
16
24
32
40
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
4
S T U405DH
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA
B V DS S , Normalized Drain-S ource B reakdown V oltage
V th, Normalized G ate-S ource T hres hold V oltage
1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50
6
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
84
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=8A
Is , S ource-drain current (A)
70
10.0 5.0
125 C 75 C
R DS (on) (m )
56 125 C 42 28 14 0 75 C 25 C
25 C
0
2
4
6
8
10
1.0 0
0.4
0.8
1.2
1.6
2.0
V G S , G ate- S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
5
S T U405DH
1200
V G S , G ate to S ource V oltage (V )
10 8 6 4 2 0 VDS =28V ID=6A
1000
C , C apacitance (pF )
800 C is s 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30
6
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 10. C apacitance
F igure 11. G ate C harge
200
S witching T ime (ns )
100 80
100 60
Tf
T D(off)
Tr
ID, Drain C urrent (A)
10
T D(on)
10
R
DS
(
) ON
L im
it
1m 10 s
10
DC
1s
0m
ms
s
1 1
V DS =20V ,ID=1A V G S =10V
1 0.5 0.1
V G S =10V S ingle P ulse T c=25 C
6 10
60 100 300 600
1
10
30
60
R g, G ate R es is tance ()
V DS , Drain-S ource V oltage (V )
F igure 12.s witching characteris tics
F igure 13. Maximum S afe O perating Area
2
r(t),Normalized E ffective T ransient T hermal Impedance
1 D=0.5
0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10
-5 -4 -3 -2 -1
t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10
10
S quare Wave P uls e Duration (s ec)
F igure 14. Normalized T hermal T rans ient Impedance C urve 6
S T U405DH
P-C hannel
25 V G S =-4V V G S =-4.5V
V G S =-8V
20 25 C -55 C 16
-ID, Drain C urrent(A)
20
-ID, Drain C urrent (A)
15
V G S =-10V
12
10
V G S =-3V
8 T j=125 C 4 0
5
0
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
-V DS , Drain-to-S ource Voltage (V )
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
120 1.5
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
100
1.4 1.3 1.2 1.1 1.0 0.0
V G S =-10V ID=-6A
R DS (on) (m )
80 60 40 V G S =-10V 20 0 V G S =-4.5V
V G S =-4.5V ID=-4A
1
5
10
15
20
25
0
25
50
75
100
125
150
T j( C )
-ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
7
S T U405DH
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
120
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=-6A
-Is , S ource-drain current (A)
100
10.0
25 C
R DS (on) (m )
80 125 C 60 40 20 0 25 C 75 C
75 C 125 C
1.0
0 2 4 6 8 10
0.4
0.6
0.8
1.0
1.2
1.4
-V G S , G ate- S ource Voltage (V )
-V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
8
S T U405DH
-V G S , G ate to S ource V oltage (V )
1200 C is s 1000
10 8 6 4 2 0 VDS =-28V ID=-6A
C , C apacitance (pF )
800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30
6
0
3
6
9
12
15
18
21 24
-V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
70
400
T D(off)
S witching T ime (ns )
100 60 10
Tf T D(on)
-ID, Drain C urrent (A)
Tr
50
)L im i t
(O N
10
10
RD
10
S
ms
DC
1s
0m
s
1 1
V DS =-20V ,ID=-1A V G S =-10V
1 0.03
VGS =-10V S ingle P ulse T c=25 C 0.1 1 10 30 60
6 10
60 100 300 600
R g, G ate R es is tance ()
-V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
2
F igure 12. Maximum S afe O perating Area
r(t),Normalized E ffective T ransient T hermal Impedance
1 D=0.5
0.2 0.1 0.1 P DM 0.05 0.02 0.01 S ING LE P ULS E 0.01 10
-5 -4 -3 -2 -1
t1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve 9
S T U405DH
P A C K A G E OUT L INE DIME NS IONS TO-252-4L
A B
H
C M
K
J
D
L
S
P
G
REF .
Millimeters
MIN MAX
A B C D P S G H J K L M
6.40 5.2 6.80 2.20 0.50 0.40 2.20 0.45 0 0.90 5.40
6.80 5.50 10.20 3.00 0.80 0.60 2.40 0.60 0.15 1.50 5.80
1.27 REF.
10
S T U405DH
TO-252-5L Tape and Reel Data
TO-252-5L Carrier Tape
TO-252-5L Reel
UNIT:
11

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